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MOSFETs
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| Part number | Manufacturer | Description | Enquire |
|---|---|---|---|
| VBE2153M | VBsemi | The VBE2153M is a high-performance P-channel MOSFET designed for high-voltage and high-current switching applications. It is packaged in TO252, single P-channe…Package: TO252 | Request quote |
| VBE2355 | VBsemi | Specifications on requestPackage: TO252 | Request quote |
| VBF1206 | VBsemi | VBF1206 is a high-performance single N-channel MOSFET in TO251 package. It has excellent electrical characteristics and can handle 20V drain-source voltage (VD…Package: TO251 | Request quote |
| VBF2317 | VBsemi | VBF2317 is a high-performance unipolar P-channel MOSFET in TO251 package. Designed for high current and low on-resistance applications, this MOSFET has a drain…Package: TO251 | Request quote |
| VBFB1206N | VBsemi | The VBFB1206N is a high-performance N-channel power MOSFET packaged in a TO251 package, suitable for applications that need to handle higher voltages and curre…Package: TO251 | Request quote |
| VBFB1638 | VBsemi | VBFB1638 is a high-performance single N-channel MOSFET in TO251 package. It has a drain-source voltage (VDS) of 60V, a gate-source voltage (VGS) of ±20V, and a…Package: TO251 | Request quote |
| VBL2104N | VBsemi | VBL2104N is a high-performance P-channel MOSFET in TO-263 package, designed for medium-high voltage and high current applications. It has a drain-source voltag…Package: TO263 | Request quote |
| VBM2124N | VBsemi | The VBM2124N is a high-performance P-channel MOSFET designed for high voltage and high current applications. The MOSFET is packaged in TO220, single P-channel …Package: TO220 | Request quote |
| VBM2611 | VBsemi | The VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power applications, the device features a -60V …Package: TO220 | Request quote |
| VBMB2611 | VBsemi | https://www.vbsemi.com/data/upload/file/VBMB2611.pdfPackage: TO220F | Request quote |
| VBP15R25S | VBsemi | VBP15R25S is a high voltage single N-channel MOSFET in TO247 package. The device has a drain-source voltage (VDS) of 500V and a gate-source voltage (VGS) of ±3…Package: TO247 | Request quote |
| VBPB165R20S | VBsemi | VBPB165R20S is a high voltage unipolar N-channel MOSFET in TO3P package. Designed to handle high voltage and high current applications, this MOSFET has a drain…Package: TO3P | Request quote |
| VNHD7008AYTR | STMicroelectronics | Motor Driver Power MOSFET PWM PowerSSO-36 | Request quote |