VBM2611

The VBM2611 is a high-performance P-channel MOSFET in a TO220 package. Designed to handle high current and high power applications, the device features a -60V drain-source voltage (VDS), ±30V gate-source voltage (VGS) tolerance, and 2V threshold voltage (Vth). The VBM2611 uses Trench technology, providing extremely low on-resistance and excellent current handling capabilities, making it suitable for a variety of applications with high power requirements.